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RQ6P020ATTCR

Name: ROHM Semiconductor RQ6P020ATTCR
Brand: ROHM Semiconductor
SKU: 755-RQ6P020ATTCR
Price: 5.84 DKK
Availability: InStock

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Mouser No:

755-RQ6P020ATTCR

Mfr. No:

RQ6P020ATTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive)

Datasheet:

RQ6P020ATTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RQ6P020ATTCR

In Stock: 4.215

Stock:: 4.215 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	5,84 kr.	5,84 kr.
	4,16 kr.	41,60 kr.
	2,78 kr.	278,00 kr.
	2,15 kr.	1.075,00 kr.
	1,95 kr.	1.950,00 kr.
Full Reel (Order in multiples of 3000)
	1,68 kr.	5.040,00 kr.
	1,55 kr.	9.300,00 kr.
	1,45 kr.	13.050,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-457T-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	220 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	30 ns
Forward Transconductance - Min:	3.4 S
Product Type:	MOSFETs
Rise Time:	11 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	83 ns
Typical Turn-On Delay Time:	8.9 ns

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

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