QPD1003

Qorvo
772-QPD1003
QPD1003

Mfr.:

Description:
GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN

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In Stock: 16

Stock:
16 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 16 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
13.998,62 kr. 13.998,62 kr.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
RF-565
N-Channel
50 V
15 A
- 2.8 V
- 40 C
+ 85 C
370 W
Brand: Qorvo
Configuration: Single
Development Kit: QPD1003PCB401
Gain: 19.9 dB
Maximum Operating Frequency: 1.4 GHz
Minimum Operating Frequency: 1.2 GHz
Moisture Sensitive: Yes
Output Power: 540 W
Packaging: Tray
Product Type: GaN FETs
Series: QPD1003
Factory Pack Quantity: 18
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: 145 V
Part # Aliases: 1131389
Unit Weight: 104,655 g
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TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.