QPD0020

Qorvo
772-QPD0020
QPD0020

Mfr.:

Description:
RF Bipolar Transistors DC-6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 100

Stock:
100 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
553,16 kr. 553,16 kr.
404,26 kr. 10.106,50 kr.
Full Reel (Order in multiples of 100)
387,10 kr. 38.710,00 kr.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Bipolar Transistors
RoHS:  
QPD0020
GaN Si
2.6 GHz to 2.69 GHz
Single
SMD/SMT
QFN-20
Reel
Cut Tape
Brand: Qorvo
Moisture Sensitive: Yes
Output Power: 34.7 W
Pd - Power Dissipation: 29 dBm
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: RF Transistors
Part # Aliases: QPD0020SR
Unit Weight: 1,430 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.