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BUK9Q20-40HJ

Name: Nexperia BUK9Q20-40HJ
Brand: Nexperia
SKU: 771-BUK9Q20-40HJ
Price: 3.92 DKK
Availability: InStock

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Mouser No:

771-BUK9Q20-40HJ

Mfr. No:

BUK9Q20-40HJ

Mfr.:

Nexperia

Description:

MOSFETs BUK9Q20-40H/SOT8002/MLPAK33

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BUK9Q20-40HJ Datasheet (PDF)

ECAD Model:

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Learn more about Nexperia BUK9Q20-40HJ

In Stock: 341

Stock:: 341 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	3,92 kr.	3,92 kr.
	2,41 kr.	24,10 kr.
	2,29 kr.	114,50 kr.
	1,54 kr.	154,00 kr.
	1,17 kr.	585,00 kr.
	1,04 kr.	1.040,00 kr.
Full Reel (Order in multiples of 3000)
	0,888 kr.	2.664,00 kr.
	0,806 kr.	4.836,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MLPAK33-WF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.05 V
Qg - Gate Charge:	8.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Nexperia
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	9.3467E+11

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Datasheet

BUK9Q20-40HJ Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.