MRF300AN

NXP Semiconductors
771-MRF300AN
MRF300AN

Mfr.:

Description:
RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

Datasheet:
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In Stock: 370

Stock:
370 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
639,10 kr. 639,10 kr.
532,42 kr. 5.324,20 kr.
501,31 kr. 15.039,30 kr.
473,41 kr. 56.809,20 kr.
510 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
30 A
133 V
1.8 MHz to 250 MHz
20.4 dB
330 W
- 40 C
+ 150 C
Through Hole
TO-247-3
Tube
Brand: NXP Semiconductors
Forward Transconductance - Min: 28 S
Pd - Power Dissipation: 272 W
Product Type: RF MOSFET Transistors
Series: MRF300AN
Factory Pack Quantity: 30
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935369813174
Unit Weight: 7,358 g
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, allowing wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR industrial, scientific, and medical (ISM) applications and broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

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