MRF1K50NR5

NXP Semiconductors
841-MRF1K50NR5
MRF1K50NR5

Mfr.:

Description:
RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

Datasheet:
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In Stock: 41

Stock:
41 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
2.503,35 kr. 2.503,35 kr.
2.159,67 kr. 21.596,70 kr.
2.074,40 kr. 51.860,00 kr.
Full Reel (Order in multiples of 50)
2.020,99 kr. 101.049,50 kr.
100 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
36 A
133 V
1.8 MHz to 500 MHz
23 dB
1.5 kW
- 40 C
+ 150 C
SMD/SMT
OM-1230-4
Reel
Cut Tape
Brand: NXP Semiconductors
Forward Transconductance - Min: 33.5 S
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Pd - Power Dissipation: 2.941 kW
Product Type: RF MOSFET Transistors
Series: MRF1K50N
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935318822578
Unit Weight: 5,281 g
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MRF1K50N 1500W RF Power Transistors

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

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