MRF101AN

NXP Semiconductors
771-MRF101AN
MRF101AN

Mfr.:

Description:
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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In Stock: 3.618

Stock:
3.618 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
322,05 kr. 322,05 kr.
263,34 kr. 2.633,40 kr.
232,23 kr. 5.805,75 kr.
222,01 kr. 22.201,00 kr.
215,97 kr. 53.992,50 kr.
500 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
REACH - SVHC:
N-Channel
Si
8.8 A
133 V
1.8 MHz to 250 MHz
21.1 dB
115 W
- 40 C
+ 150 C
Through Hole
TO-220-3
Tube
Brand: NXP Semiconductors
Forward Transconductance - Min: 7.1 S
Number of Channels: 1 Channel
Pd - Power Dissipation: 182 W
Product Type: RF MOSFET Transistors
Series: MRF101AN
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935377233129
Unit Weight: 60 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

MRF101 RF Power LDMOS Transistors

NXP Semiconductors MRF101 RF Power LDMOS Transistors are highly-rugged N-channel enhancement mode lateral MOSFETs designed to exhibit high performance up to 250MHz. These transistors integrate ESD protection with a greater negative gate-source voltage range for improved Class C operation. Both the transistors come in two pin-out versions mirroring each other to support push-pull configurations for further flexibility. The MRF101 transistors are ideal for high Voltage Standing Wave Ratio (VSWR) industrial, scientific, and medical applications.