MSCSM120AM042CT6LIAG

Microchip Technology
494-M120AM042CT6LIAG
MSCSM120AM042CT6LIAG

Mfr.:

Description:
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI
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Datasheet:
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In Stock: 1

Stock:
1 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
4.407,82 kr. 4.407,82 kr.

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET-SiC SBD Modules
MOSFET / SiC SBD
SiC
1.5 V
1.2 kV
- 10 V, + 25 V
SMD/SMT
SP6
- 40 C
+ 125 C
Brand: Microchip Technology
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 67 ns
Id - Continuous Drain Current: 495 A
Pd - Power Dissipation: 2.031 kW
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 5.2 mOhms
Rise Time: 55 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 166 ns
Typical Turn-On Delay Time: 56 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
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CNHTS:
8504409100
USHTS:
8541290065
ECCN:
EAR99

AgileSwitch® Phase Leg SiC MOSFET Power Modules

Microsemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes and combine the advantages of both devices. These power modules feature an extremely low inductance SP6LI package with a maximum stray inductance of 3nH. These SP6LI power modules are offered in 1200V and 1700V variants with a case temperature (Tc) of +80°C. Offering higher power density and a compact form factor, the SP6LI package enables a lower quantity of modules in parallel to achieve complete systems, helping designers to downsize their equipment further.

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