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MSC090SMA070S

Name: Microchip MSC090SMA070S
Brand: Microchip Technology
SKU: 494-MSC090SMA070S
Price: 24.77 DKK
Availability: OutOfStock

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Mouser No:

494-MSC090SMA070S

Mfr. No:

MSC090SMA070S

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-268

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Datasheet:

MSC090SMA070S Datasheet (PDF)

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	24,77 kr.	4.458,60 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D3PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	111 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	91 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	6,200 g

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Datasheet

MSC090SMA070S Datasheet (PDF)

DTS

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PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.