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MSC050SDA120BCT

Name: Microchip MSC050SDA120BCT
Brand: Microchip Technology
SKU: 494-MSC050SDA120BCT
Price: 210.52 DKK
Availability: InStock

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Mouser No:

494-MSC050SDA120BCT

Mfr. No:

MSC050SDA120BCT

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes SIC SBD 1200 V 50 A TO-247

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Datasheet:

MSC050SDA120BCT Datasheet

ECAD Model:

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In Stock: 10

Stock:: 10

Can Dispatch Immediately

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On Order:: 30

Expected 06/04/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	210,52 kr.	210,52 kr.
	194,11 kr.	5.823,30 kr.
	168,89 kr.	20.266,80 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual
If - Forward Current:	109 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	290 A
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Microchip Technology
Pd - Power Dissipation:	429 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.