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MSC030SDA120BCT

Name: Microchip MSC030SDA120BCT
Brand: Microchip Technology
SKU: 494-MSC030SDA120BCT
Price: 130.48 DKK
Availability: InStock

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Mouser No:

494-MSC030SDA120BCT

Mfr. No:

MSC030SDA120BCT

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes SIC SBD 1200 V 30 A TO-247

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Datasheet:

MSC030SDA120BCT Datasheet (PDF)

ECAD Model:

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In Stock: 45

Stock:: 45 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	130,48 kr.	130,48 kr.
	120,33 kr.	1.203,30 kr.
	105,48 kr.	3.164,40 kr.
	104,74 kr.	12.568,80 kr.
	104,66 kr.	28.258,20 kr.
	104,44 kr.	53.264,40 kr.
1.020	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual
If - Forward Current:	65 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	165 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Microchip Technology
Pd - Power Dissipation:	259 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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TARIC:: 8541100000
CNHTS:: 8504409190
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.