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MSC010SDA070B

Name: Microchip MSC010SDA070B
Brand: Microchip Technology
SKU: 494-MSC010SDA070B
Price: 18.8 DKK
Availability: InStock

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Mouser No:

494-MSC010SDA070B

Mfr. No:

MSC010SDA070B

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes UNRLS, FG, GEN2 SIC SBD

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Datasheet:

MSC010SDA070B Datasheet (PDF)

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In Stock: 23

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	18,80 kr.	18,80 kr.
	17,31 kr.	519,30 kr.
	15,07 kr.	1.808,40 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	700 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	90 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	MSC0
Packaging:	Tube
Brand:	Microchip Technology
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	700 V

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CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.