GTRA362002FC-V1-R0

MACOM
941-GTRA362002FCV1R0
GTRA362002FC-V1-R0

Mfr.:

Description:
GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz

ECAD Model:
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This product may require additional documentation to export from the United States.

In Stock: 40

Stock:
40 Can Dispatch Immediately
Quantities greater than 40 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 50)
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1.361,23 kr. 1.361,23 kr.
997,55 kr. 9.975,50 kr.
Full Reel (Order in multiples of 50)
997,55 kr. 49.877,50 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
Screw Mount
H-37248C-4
N-Channel
150 V
4.1 A
+ 225 C
Brand: MACOM
Gain: 13.5 dB
Maximum Operating Frequency: 3.6 GHz
Minimum Operating Frequency: 3.4 GHz
Output Power: 200 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
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USHTS:
8541290055
ECCN:
3A001.b.3.a

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.