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IMBG75R025M2HXTMA1

Name: Infineon IMBG75R025M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG75R025M2HXTM
Price: 79.08 DKK
Availability: InStock

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Mouser No:

726-IMBG75R025M2HXTM

Mfr. No:

IMBG75R025M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC MOSFET 750 V G2

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMBG75R025M2HXTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMBG75R025M2HXTMA1

In Stock: 133

Stock:: 133 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	79,08 kr.	79,08 kr.
	64,38 kr.	643,80 kr.
	53,64 kr.	5.364,00 kr.
	47,82 kr.	23.910,00 kr.
Full Reel (Order in multiples of 1000)
	40,66 kr.	40.660,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	64 A
Rds On - Drain-Source Resistance:	31 mOhms
Vgs - Gate-Source Voltage:	- 7 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	49 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	234 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Series:	CoolSiC G2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	IMBG75R025M2H SP006098939

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Datasheet

IMBG75R025M2HXTMA1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.