BFR182E6327HTSA1

Name: Infineon BFR182E6327HTSA1
Brand: Infineon Technologies
SKU: 726-BFR182E6327HTSA1
Price: 1.99 DKK
Availability: InStock

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Mouser No:

726-BFR182E6327HTSA1

Mfr. No:

BFR182E6327HTSA1

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

Datasheet:

BFR182E6327HTSA1 Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 340

Stock:: 340

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On Order:: 9.000

Expected 11/06/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,99 kr.	1,99 kr.
	1,20 kr.	12,00 kr.
	0,985 kr.	98,50 kr.
	0,903 kr.	451,50 kr.
	0,865 kr.	865,00 kr.
Full Reel (Order in multiples of 3000)
	0,813 kr.	2.439,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

BFR 182 E6327

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

3,40 kr.

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFR182
Technology:	Si
Package/Case:	SOT-23-3
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	BFR 182 E6327 SP000011051
Unit Weight:	8 mg

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Datasheet

BFR182E6327HTSA1 Datasheet (PDF)

Models

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

SPICE Models

Infineon-RFTransistor-SPICE.lib-SM-v02_10-EN

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541219000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.