BFR 106 E6327

Infineon Technologies
726-BFR106E6327
BFR 106 E6327

Mfr.:

Description:
RF Bipolar Transistors NPN Silicon RF TRANSISTOR

Datasheet:
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Learn more about Infineon Technologies BFR 106 E6327

In Stock: 6.747

Stock:
6.747 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
3,72 kr. 3,72 kr.
2,27 kr. 22,70 kr.
1,53 kr. 153,00 kr.
1,10 kr. 550,00 kr.
1,00 kr. 1.000,00 kr.
Full Reel (Order in multiples of 3000)
0,85 kr. 2.550,00 kr.
0,768 kr. 4.608,00 kr.
0,731 kr. 6.579,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFR106E6327HTSA1
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
1,99 kr.
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFR106
Bipolar
Si
NPN
- 65 C
+ 150 C
Single
SMD/SMT
SOT-23
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Pd - Power Dissipation: 700 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: SP000011044 BFR16E6327XT BFR106E6327HTSA1
Unit Weight: 8 mg
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Attributes selected: 0

Datasheet

Product Catalogs

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TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541219000
MXHTS:
85412999
ECCN:
EAR99

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

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