+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXSH65N120L2KHV

Name: IXYS IXSH65N120L2KHV
Brand: IXYS
SKU: 747-IXSH65N120L2KHV
Price: 64.31 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXSH65N120L2KHV

Mfr. No:

IXSH65N120L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH65N120L2KHV Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXSH65N120L2KHV

In Stock: 100

Stock:: 100

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 450

Expected 02/06/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	64,31 kr.	64,31 kr.
	48,79 kr.	487,90 kr.
	40,58 kr.	4.058,00 kr.
	36,18 kr.	16.281,00 kr.
	32,30 kr.	29.070,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	110 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	10.5 ns
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22.1 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19.3 ns
Typical Turn-On Delay Time:	9.6 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXSH65N120L2KHV Datasheet (PDF)

This functionality requires JavaScript to be enabled.

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).