IXSA80N120L2-7TR

IXYS
747-IXSA80N120L2-7TR
IXSA80N120L2-7TR

Mfr.:

Description:
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 760

Stock:
760 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
76,99 kr. 76,99 kr.
62,66 kr. 626,60 kr.
49,09 kr. 4.909,00 kr.
46,55 kr. 23.275,00 kr.
Full Reel (Order in multiples of 800)
45,06 kr. 36.048,00 kr.

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7L
N-Channel
1 Channel
1.2 kV
79 A
39 mOhms
- 5 V, + 20 V
4.5 V
135 nC
- 55 C
+ 175 C
395 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 13.6 ns
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 24.6 ns
Series: IXSA80N120L2-7
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 28.6 ns
Typical Turn-On Delay Time: 15.4 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

IXSA80N120L2-7 SiC MOSFET

IXYS IXSA80N120L2-7 SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting power cycling characteristics and very fast, low-loss switching behavior. This MOSFET features low conduction losses, low gate drive power requirements, and low thermal management effort and is optimized for gate control. The IXSA80N120L2-7 SiC MOSFET is used for high-speed industrial switch-mode power supplies. This SiC MOSFET is ideal for solar inverters, switch-mode power supplies, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating.