SSM2212RZ

Analog Devices
584-SSM2212RZ
SSM2212RZ

Mfr.:

Description:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor

ECAD Model:
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In Stock: 55

Stock:
55
Can Dispatch Immediately
On Order:
1.666
Expected 10/04/2026
Factory Lead Time:
10
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
68,41 kr. 68,41 kr.
53,49 kr. 534,90 kr.
44,61 kr. 4.371,78 kr.
39,69 kr. 23.337,72 kr.
33,72 kr. 36.350,16 kr.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
68,41 kr.
Min:
1

Similar Product

Analog Devices SSM2212RZ-R7
Analog Devices
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor

Product Attribute Attribute Value Select Attribute
Analog Devices Inc.
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOIC-8
NPN
Dual
20 mA
40 V
40 V
50 mV
200 MHz
- 40 C
+ 85 C
SSM2212
Tube
Brand: Analog Devices
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
DC Collector/Base Gain hFE Min: 200 at 10 uA, 15 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 98
Subcategory: Transistors
Unit Weight: 540 mg
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Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

SSM2212 Dual-Matched NPN Transistor

Analog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.