+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IKW75N65ET7XKSA1

Name: Infineon IKW75N65ET7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW75N65ET7XKSA1
Price: 41.93 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IKW75N65ET7XKSA1

Mfr. No:

IKW75N65ET7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package

Datasheet:

IKW75N65ET7XKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IKW75N65ET7XKSA1

In Stock: 2

Stock:: 2

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 720

Expected 21/05/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	41,93 kr.	41,93 kr.
	26,04 kr.	260,40 kr.
	21,78 kr.	2.178,00 kr.
	20,59 kr.	9.883,20 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	333 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IGBT7 T7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW75N65ET7 SP005348294

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IKW75N65ET7XKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low V_CEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.